View f4n60 datasheet:

F4N604A 600V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 600Vplanar technology which reduce the conduction loss, improve switchingI = 4.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)= 2.1RMS from all three terminals to external heatsink. TO-220F series complywith UL standards (File ref:E252906).2 Features Fast switching ESD improved capability Low on resistance(Rdson2.5) Low gate charge(Typ: 14.5nC) Low reverse transfer capacitances(Typ: 4.0pF) 100% single pulse avalanche energy test 100% VDS test3 Applications Used in various power switching circuit for systemminiaturization and higher efficiency. Power switch ci

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