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View fgw75n60h datasheet:

fgw75n60hfgw75n60h

http://www.fujielectric.com/products/semiconductor/FGW75N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absolute Maximum Ratings (at TC=25C unless otherwise specified)Items Symbols Characteristics Units RemarksCollectorCollector-Emitter Voltage VCES 600 VGate-Emitter Voltage VGES 20 VTC=25C, Tj=150CIC@25 100 ADC Collector Current Note *1IC@100 75 A TC=100C, Tj=150CPulsed Collector Current ICP 225 A Note *2GateTurn-Off Safe Operating Area - 225 A VCE600V, Tj175CVCC300V, VGE=12VShort Circuit Withstand Time tSC 5 sTj150CMaximum Power Dissipation

 

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 fgw75n60h.pdf Database, Innovation, IC, Electricity

 

 
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