View fqaf11n40 datasheet:

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply,electronic lamp ballast based on half bridge.DG TO-3PFGD SS AbsoIute Maximum Ratings TC = 25C unless otherwise notedSymboI Parameter FQAF11

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