View fqaf13n80 datasheet:

March 2001TMQFETFQAF13N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 800V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 68 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies.DG TO-3PFG D SFQAF SeriesSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQAF13N80 UnitsVDSSDrain-Source Voltage 800 VIDDrain Current - Cont

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