View fre9260 datasheet:

FRE9260D, FRE9260R,FRE9260H19A, -200V, 0.210 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 19A, -200V, RDS(on) = 0.210TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si) Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically- Survives 2E12 Typically If Current Limited to IDM Photo Current - 18.0nA Per-RAD(Si)/sec Typically Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2- Usable to 1E14 Neutrons/cm2DescriptionSymbolThe Intersil Corporation Sector has designed a series of SECOND GENERATIONhardened power MOSFETs of both N and P channel enhancement types with rat-ings from 100V to 500V, 1A to 60A, and on resistance as low

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