View hgi120n10al hgd120n10al datasheet:

,HGI120N10AL HGD120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness60 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitTO-251 TO-252Gate DC/DC in Telecoms and Inductrial2Src31321Part Number Package MarkingHGI120N10AL TO-251 GI120N10ALHGD120N10AL TO-252 GD120N10ALAbsolute Maximum Ratings at Tj=25 (unless otherwise specified)Parameter Symbol Conditions Value UnitTC=25 60Continuous Drain Current (Silicon Limited) ID ATC=100 42Drain to Source Voltage VDS - 100 VGate to Source Voltage VGS - 20 VPulsed Drain

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