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View hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds datasheet:

hgtg12n60a4d_hgtp12n60a4d_hgt1s12n60a4dshgtg12n60a4d_hgtp12n60a4d_hgt1s12n60a4ds

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG12N60A4D,www.onsemi.comHGTP12N60A4D,HGT1S12N60A4DSCThe HGTG12N60A4D, HGTP12N60A4D andHGT1S12N60A4DS are MOS gated high voltage switching devicesGcombining the best features of MOSFETs and bipolar transistors.These devices have the high input impedance of a MOSFET and theElow on-state conduction loss of a bipolar transistor. The much loweron-state voltage drop varies only moderately between 25C andCOLLECTOR150C. The IGBT used is the development type TA49335. The diode(FLANGE)used in anti-parallel is the development type TA49371.TO-220-3LDThis IGBT is ideal for many high voltage switching applications CASE 340ATJEDEC ALTERNATEoperating at high frequencies where low conduction losses areVERSIONessential. This device has been optimized for high frequency switchGC

 

Keywords - ALL TRANSISTORS DATASHEET

 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf Design, MOSFET, Power

 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf Database, Innovation, IC, Electricity

 

 
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