View hgtp20n60b3 hgtg20n60b3 datasheet:

HGTP20N60B3,S E M I C O N D U C T O RHGTG20N60B3February 1996 40A, 600V, UFS Series N-Channel IGBTJEDEC TO-220ABFeatures PackageEMITTER COLLECTOR 40A, 600V at TC = +25oCGATE Square Switching SOA CapabilityCOLLECTOR(FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction LossJEDEC STYLE TO-247DescriptionEMITTERThe HGTP20N60B3 and the HGTG20N60B3 are Generation 3COLLECTORMOS gated high voltage switching devices combining the best fea- COLLECTORGATE(BOTTOM SIDEtures of MOSFETs and bipolar transistors. These devices have theMETAL)high input impedance of a MOSFET and the low on-stateconduction loss of a bipolar transistor. The much lower on-statevoltage drop varies only moderately between +25oC and +150oC.The IGBT is ideal for many high voltage switching applications oper-ating at moderate frequ

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