View hm7n65 hm7n65f datasheet:

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switching Fast witchingsperformance, and withstand high ener gy pulse in the 100% avalanche testedavalanche and commutation mode. These devices are well Improved dv/dt capabilitysuited for high efficiency sw itched mode power supp lies,active power factor corr ection based on half br idgetopology.D G TO-220 TO-220FG DSG D S SAbsolute Maximum Ratings TC = 25Cunless otherwise notedSymbo

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