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View ihw15n120r3 2 2 datasheet:

ihw15n120r3_2_2ihw15n120r3_2_2

IH-seriesReverse conducting IGBT with monolithic body diodeIHW15N120R3Data sheetIndustrial & MultimarketIHW15N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStopTM technology applications offers: - very tight parameter distributionG - high ruggedness, temperature stable behaviorE - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat Low EMI Qualified according to JESD-022 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/Applications: Inductive cooking Key Performance and Package ParametersType V I V , T =25C T Marking PackageType V I V , T =25

 

Keywords - ALL TRANSISTORS DATASHEET

 ihw15n120r3 2 2.pdf Design, MOSFET, Power

 ihw15n120r3 2 2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ihw15n120r3 2 2.pdf Database, Innovation, IC, Electricity

 

 
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