View ikw30n65el5 detailed specification:
IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode IKW30N65EL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKW30N65EL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode C Features and Benefits Low V L5 technology offering CE(sat) Very low collector-emitter saturation voltage V CEsat Best-in-Class tradeoff between conduction and switching losses 650V breakdown voltage G Low gate charge Q G E Maximum junction temperature 175 C Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice models http //www.infineon.com/igbt/ Applications Uninte... See More ⇒
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ikw30n65el5.pdf Design, MOSFET, Power
ikw30n65el5.pdf RoHS Compliant, Service, Triacs, Semiconductor
ikw30n65el5.pdf Database, Innovation, IC, Electricity
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