View ikw30n65h5 detailed specification:
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW30N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKW30N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E Low gate charge Q G IGBT copacked with RAPID 1 fast and soft antiparallel diode Maximum junction temperature 175 C Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpi... See More ⇒
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ikw30n65h5.pdf Design, MOSFET, Power
ikw30n65h5.pdf RoHS Compliant, Service, Triacs, Semiconductor
ikw30n65h5.pdf Database, Innovation, IC, Electricity
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