View ikw30n65nl5 datasheet:

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeIKW30N65NL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW30N65NL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeCFeatures and Benefits:Low V L5 technology offeringCE(sat) Very low collector-emitter saturation voltage VCEsat Best-in-Class tradeoff between conduction and switching losses 650V breakdown voltageG Low gate charge QGE Maximum junction temperature 175C Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice models:http://www.infineon.com/igbt/Applications: Uninte

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 ikw30n65nl5.pdf Design, MOSFET, Power

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