View irf9630 rf1s9630sm datasheet:

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of SOA is Power Dissipation Limitedoperation. All of these power MOSFETs are designed for Nanosecond Switching Speedsapplications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other Linear Transfer Characteristicshigh-power switching devices. The high input impedance High Input Impedanceallows these types to be operated directly from integrated Related Literaturecircuits.- TB334 Guidel

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