All Transistors. Equivalents Search

View irg4bc30kd-s detailed specification:

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switching speed tighter parameter distribution and higher efficiency @VGE = 15V, IC = 16A E than previous generations n-channel IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses This part replaces the IRGBC30KD2-S and IR... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irg4bc30kd-s.pdf Design, MOSFET, Power

 irg4bc30kd-s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg4bc30kd-s.pdf Database, Innovation, IC, Electricity