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View irg4bc30kd detailed specification:

PD -94910A IRG4BC30KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed tighter parameter distribution and higher efficiency @VGE = 15V, IC = 16A than previous generations E IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultrasoft recovery antiparallel diodes Lead-Free Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGBC30KD2 and IRGBC30MD2 products TO-220A... See More ⇒

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