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View irg4bc40f datasheet:

irg4bc40firg4bc40f

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE Industry standard TO-220AB packagen-channelBenefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTsTO-220ABAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Breakdown Voltage 600 VIC @ TC = 25C Continuous Collector Current 49IC @ TC = 100C Continuous Collector Cur

 

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 irg4bc40f.pdf Design, MOSFET, Power

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