View irg4bc40u datasheet:

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 20AE Industry standard TO-220AB packagen-channelBenefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTsTO-220ABAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 40IC @ TC = 100C Continuous Collector Curre

Keywords - ALL TRANSISTORS DATASHEET

 irg4bc40u.pdf Design, MOSFET, Power

 irg4bc40u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg4bc40u.pdf Database, Innovation, IC, Electricity