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View irg4pc50kd detailed specification:

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10 s @125 C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 30A E IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IG... See More ⇒

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