All Transistors. Equivalents Search

 

View irg4pc50u detailed specification:

irg4pc50uirg4pc50u

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Industry standard TO-247AC package n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25 C Continuous Collector Current 55 IC @ TC = 100 C Continuous Colle... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 irg4pc50u.pdf Design, MOSFET, Power

 irg4pc50u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg4pc50u.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.