View irg4pc50ud detailed specification:
PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing ... See More ⇒
Keywords - ALL TRANSISTORS SPECS
irg4pc50ud.pdf Design, MOSFET, Power
irg4pc50ud.pdf RoHS Compliant, Service, Triacs, Semiconductor
irg4pc50ud.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



