View irg4pc50upbf datasheet:

PD -95186IRG4PC50UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE Industry standard TO-247AC packagen-channel Lead-FreeBenefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT'sTO-247ACAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Breakdown Voltage 600 VIC @ TC = 25C Continuous Collector Current 55IC @ TC = 100C Continuous Collector Current 27 AICM

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