View irg4pc50w detailed specification:
D IRG4PC50W I T D T I T I T C Features Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 27A E Low IGBT conduction losses n-channel Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent o... See More ⇒
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irg4pc50w.pdf Design, MOSFET, Power
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