View irl1004 datasheet:

PD - 91702BIRL1004HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.0065 175C Operating TemperatureG Fast SwitchingID = 130A Fully Avalanche RatedSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processing techniquesto achieve the lowest possible on-resistance per siliconarea. This benefit, combined with the fast switching speedand ruggedized device design that HEXFET power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levelsto approximately 50 watts. The low thermal resistance and TO-220ABlow p

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