All Transistors. Datasheet

 

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irl1004sirl1004s

isc N-Channel MOSFET Transistor IRL1004SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate-Source Voltage 16 VGSSDrain Current-Continuous;Tc=25130I AD92Tc=100I Drain Current-Single Pulsed 520 ADMP Total Dissipation 200 WDT Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.75/WRth(ch-a) Channel-to-ambient thermal resistance 401isc websit

 

Keywords - ALL TRANSISTORS DATASHEET

 irl1004s.pdf Design, MOSFET, Power

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 irl1004s.pdf Database, Innovation, IC, Electricity

 

 
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