All Transistors. Equivalents Search

View irlz34npbf detailed specification:

PD - 94830 IRLZ34NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.035 l Fully Avalanche Rated G l Lead-Free ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance TO-220AB and low package cost of the TO-220 contribut... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irlz34npbf.pdf Design, MOSFET, Power

 irlz34npbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irlz34npbf.pdf Database, Innovation, IC, Electricity