View irlz44zpbf irlz44zspbf irlz44zlpbf datasheet:

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These features combineto make this design an extremely efficient andreliable device for use in a wide variety ofTO-220AB D2Pak TO-262applications.IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbFAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, VGS @ 10V (Silicon Limited)ID @ TC

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