View ktc1020 datasheet:

DIP Type TransistorsNPN TransistorsKTC1020TO-92M Unit:mm6.0 0.2 Features1.0 0.1 Excelent hFE Linearity 1 Watt Amplifier Application0.50 0.1 Complementary to KTA102121 31.50 3.0 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500mA Base Current IB 100 Collector Power Dissipation PC 400 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 35 Collector- emitter breakdown voltage VCEO Ic= 1 mA IB= 0 30 V Emitter - base b

Keywords - ALL TRANSISTORS DATASHEET

 ktc1020.pdf Design, MOSFET, Power

 ktc1020.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ktc1020.pdf Database, Innovation, IC, Electricity