View lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60 datasheet:

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 12.8 nC)g 100% UIS tested TO-251 TO-252 TO-220 TO-220F RoHS compliantDApplicationsG Power faction correction. Switched mode power supplies. TO-262 SPb LED driver. N-Channel MOSFETAbsolute Maximum RatingsParameter Symbol Value UnitDrain-Source Voltage V 600 VDSSContinuous drain current ( T = 25C ) I 4 AC D( T = 100C ) 2.5 AC1)Pulsed drain current I 16 ADMGate-Source voltage V 30 VGSS2)Avalanche energy, single

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 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf Design, MOSFET, Power

 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf Database, Innovation, IC, Electricity