View mdt30p10d datasheet:

MDT30P10DSiliconSilicon P-Channel Power MOSFETDescriptionThe MDT30P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=-110V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger Electrical Characteristics @ Ta=25@ Ta=25 (unless otherwise specified) a) Absolute Maximum Ratings:Symbol Parameter Value Units ParameterVDSS Drain-to-Source Breakdown Voltage -110 V Source Breakdown Voltage ID Drain Current (continuous) at Tc=25 -30 A Drain Current (continuous) at Tc=25IDM Drain Current (pulsed) -120 A VGS Gate to Source Voltage +/-20 V Ptot Total Dissipation at Tc=25 180 W Tj Max. Operating Junction Tempe

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