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mdt40n10dmdt40n10d

100V N-Channel Power MOSFETDESCRIPTIONThe MDT40N10D uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 40A R

 

Keywords - ALL TRANSISTORS DATASHEET

 mdt40n10d.pdf Design, MOSFET, Power

 mdt40n10d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mdt40n10d.pdf Database, Innovation, IC, Electricity

 

 
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