View mdt40p10d datasheet:

Silicon P-Channel Power MOSFETDescriptionThe MDT40P10D uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS= -100V, ID=-40A Low ON Resistance Low Reverse transfer capacitancesSchematic diagram 100% Single Pulse avalanche energy TestApplication Power switching application Adapter and chargerTO-252Electrical Characteristics @ Ta=25(unless otherwise specified) Absolute Maximum Ratings:Symbol Parameter Value UnitsV Drain-to-Source Breakdown Voltage -100 VDSSI Drain Current (continuous) at Tc=25 -40 ADI Drain Current (pulsed) -120 ADMV Gate to Source Voltage +/-20 VGSP Total Dissipation at Tc=25 180 WtotT Max. Operating Junction Temperature 175 jE Single Pulse Avalanche Energy 700 mJASwww.mns-kx.comElectrical Param

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