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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW20N60D/DDesigner's Data SheetMGW20N60DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24720 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged32 A @ 25Cwith a soft recovery ultrafast rectifier and uses an advanced600 VOLTStermination scheme to provide an enhanced and reliable highSHORT CIRCUIT RATEDvoltageblocking capability. Short circuit rated IGBTs are specifi-cally suited for applications requiring a guaranteed short circuitwithstand time such as Motor Control Drives. Fast switchingcharacteristics result in efficient operations at high frequencies.Copackaged IGBTs save space, reduce assembly time and cost. Industry Standard High Power T

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