View mj21195 mj21196 datasheet:

MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @ IC = 8 AdcPOWER TRANSISTORS Excellent Gain Linearity250 VOLTS, 250 WATTS High SOA: 3 A, 80 V, 1 Sec Pb-Free Packages are Available*MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 250 VdcCollector-Base Voltage VCBO 400 VdcEmitter-Base Voltage VEBO 5 VdcTO-204AA (TO-3)CASE 1-07Collector-Emitter Voltage - 1.5V VCEX 400 VdcCollector Current - Continuous IC 16 Adc- Peak (Note 1) 30MARKING DIAGRAMBase Current - Continuous IB 5 AdcTota

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