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View mje13005d detailed specification:

SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACTERISTIC SYMBOL RATING UNIT D 0.8 0.1 + I _ E 3.6 + 0.2 VCBO _ Collector-Base Voltage 800 V F + 2.8 0.1 K P 3.7 G VCEO Collector-Emitter Voltage 400 V M H 0.5+0.1/-0.05 L 1.5 I VEBO J Emitter-Base Voltage 10 V _ + J 13.08 0.3 D K 1.46 IC DC 5 _ H L 1.4 0.1 + N N Collector Current A _ + M 1.27 0.1 1 2 3 ICP Pulse 10 _ + N 2.54 0.2 _ + O 4.5 0.2 IB Base Current 2 A _ + P 2.4 0.2 1. BASE _ 9.2 + 0.2 Q 2. COLLECTOR 1 2 3 PC 75 W Collector Po... See More ⇒

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