View mmbt5551-l mmbt5551-h datasheet:

Jingdao Microelectronics co.LTD MMBT5551MMBT5551SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 180 V2.EMITTERCollectorEmitter Voltage VCEO 160 V3.COLLECTOREmitterBase Voltage VEBO 6 V600 mACollector Current Continuous ICmWCollector Power Dissipation PC 300Thermal Resistance From JunctionRthJA 416 /W To AmbientOperation Junction and Storage TJ,Tstg -55~+150Temperature Range CLASSIFICATION OF hFEL HRank200-300Range 100-200ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)Symbol Test conditions Min TypMax UnitParameterVCollector-base breakdown volta

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