View mmdt3052dw datasheet:

MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar TransistorFeatures Each transistor elements are independentApplications For low frequency amplify applicationMARKING: 5GParameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dissipation Ptot 150 mWJunction Temperature Tj 125Storage Temperature Range Tstg - 55 to + 125Absolute Maximum Ratings (Ta = 25)OCharacteristics at Ta = 25 CParameter Symbol Min. Typ. Max. UnitDC Current Gainat VCE = 6 V, IC = 0.1 mA hFE90 - - -at VCE = 6 V, IC = 1 mA E hFE120 - 240 -F hFE200 - 400 -G hFE350 700 --Collector Base Cutoff CurrentICBO - - 100 nAat VCB = 50 VEmitter Base Cutoff CurrentIEBO - - 100 nAat VEB = 6 VCollector Emitter Breakdown VoltageV(BR)CEO 50 - - Vat I

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