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MP4101 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4101 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive. Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T High collector current: IC (DC) = 4 A (max) High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Zener diode included between collector and base. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 10 V Collector-emitter voltage VCEO 60 10 V JEDEC Emitter-base voltage VEBO 6 VJEITA DC IC 4 Collector current A TOSHIBA 2-25A1APulse ICP 6 Weight: 2.1 g (typ.) Continuous base current IB 0.5 ACol

 

Keywords - ALL TRANSISTORS DATASHEET

 mp4101.pdf Design, MOSFET, Power

 mp4101.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mp4101.pdf Database, Innovation, IC, Electricity

 

 
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