View mpf3n150 datasheet:

Silicon N-Channel Power MOSFETDescriptionThe MPF3N150 uses advanced technology and design toprovide excellent R . It can be used in a wide variety ofDS(ON)applications.General Features V =1500V,I =3ADS D Low ON ResistanceSchematic diagram Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching application Adapter and chargerElectrical CharacteristicsTO-220F@ Ta=25 (unless otherwise specified)Absolute Maximum Ratings:Symbol Parameter Value UnitsDrain-to-Source Breakdown Voltage 1500 VVDSSI 3 AD Drain Current (continuous) at Tc=2512 AI Drain Current (pulsed)DMGate to Source Voltage +/-30 VVGSTotal Dissipation at Tc=25 250 WPtotT Max. Operating Junction Temperature 175 jSingle Pulse Avalanche Energy 125 mJEASElectrical Parameters:Sym

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