View mpsa13 datasheet:

MPSA13 MMBTA13 PZTA13CCEECBC TO-92BSOT-23BSOT-223EMark: 1MNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 30 VVEBO Emitter-Base Voltage 10 VIC Collector Current - Continuous 1.2 AOperating and Storage Junction Temperature Range -55 to +150TJ, T Cstg*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed o

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