View nce75ed75vt datasheet:

NCE75ED75VT750V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC = 75 ACEsat High speed switching, low switching losses Maximum junction temperature Tvjmax = 175C Tighten parameter distribution High ruggedness, temperature stable behavior Pb-free lead plating; RoHS compliantSchematic diagramApplication PV power Three-level Solar String Inverter UPSPackage Marking and Ordering InformationDevice Device Package Device MarkingNCE75ED75VT TO-247-3L NCE75ED75VTTO-247-3LAbsolute Maximum Ratings (T =25C unless o

Keywords - ALL TRANSISTORS DATASHEET

 nce75ed75vt.pdf Design, MOSFET, Power

 nce75ed75vt.pdf RoHS Compliant, Service, Triacs, Semiconductor

 nce75ed75vt.pdf Database, Innovation, IC, Electricity