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PHE13005X Silicon diffused power transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated, NPN power switching transistor in a full pack plastic package for use in high frequency electronic lighting ballast applications 1.2 Features and benefits Fast switching Isolated package High voltage capability of 700 V Low thermal resistance 1.3 Applications Electronic lighting ballasts 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit IC collector current DC; see Figure 3, 1 and 2 - - 4 A Ptot total power Th 25 C; see Figure 4 - - 26 W dissipation VCESM collector-emitter VBE = 0 V - - 700 V peak voltage Static characteristics hFE DC current gain IC =1 A; VCE =5V; 12 20 40 Th =25 C; see Figure 11 VCE =5V; IC =2A; 10 17 28 Th =2... See More ⇒

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