View r07ds0158ej rjh60d1dpp datasheet:

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load) Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)C1. Gate2. Collector G3. Emitter123EAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage / diode reverse voltage VCES / VR 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 20 ATc = 100C IC 10 ACollector pe

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