View rjh60d1dpp-m0 datasheet:

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load) Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)C1. Gate2. Collector G3. Emitter123EAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage / diode reverse voltage VCES / VR 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 20 ATc = 100C IC 10 ACollector peak cur

Keywords - ALL TRANSISTORS DATASHEET

 rjh60d1dpp-m0.pdf Design, MOSFET, Power

 rjh60d1dpp-m0.pdf RoHS Compliant, Service, Triacs, Semiconductor

 rjh60d1dpp-m0.pdf Database, Innovation, IC, Electricity