View rjh60d2dpp-e0 datasheet:

Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)C1. Gate2. CollectorG3. Emitter1E23Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage / diode reverse voltage VCES / VR 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 25 ATc = 100C IC 12 ACollec

Keywords - ALL TRANSISTORS DATASHEET

 rjh60d2dpp-e0.pdf Design, MOSFET, Power

 rjh60d2dpp-e0.pdf RoHS Compliant, Service, Triacs, Semiconductor

 rjh60d2dpp-e0.pdf Database, Innovation, IC, Electricity