View rjh60d5dpm datasheet:

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200600V - 37A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C1. GateG 2. Collector3. EmitterE123Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage / diode reverse voltage VCES / VR 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 75 ATc = 100C IC 37 ACollector p

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