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Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300 600V - 8A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK (S)-(1) ) C 4 1. Gate 2. Collector G 3. Emitter 1 2 4. Collector 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 16 A Tc = 100 C IC 8 A Co... See More ⇒

 

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