All Transistors. Equivalents Search

 

View rjh60m2dpe detailed specification:

rjh60m2dperjh60m2dpe

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300 600V - 12A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 45 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK (S)-(1) ) C 4 1. Gate 2. Collector G 3. Emitter 1 2 4. Collector 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 25 A Tc = 100... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 rjh60m2dpe.pdf Design, MOSFET, Power

 rjh60m2dpe.pdf RoHS Compliant, Service, Triacs, Semiconductor

 rjh60m2dpe.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.