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Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300 600V - 12A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 45 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 25 A Tc = 100 C IC 12 A Collec... See More ⇒

 

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