View rjp60f5dpm datasheet:

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200600V - 40A - IGBT Rev.2.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C1. GateG 2. Collector3. EmitterE123Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25 C IC 80 ATc = 100 C IC 40 ACollector peak current ic(peak) Note1 160 ACollector dissipation PC 45 WJunction to case thermal impedance j-c 2.78 C/WJunction temperatu

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